This document describes the actual production OPC flow used in Siemens EDA Calibre, reflecting industry-standard practices for advanced semiconductor manufacturing.
[GDS Layout]
|
v
[Design Preparation / Fracturing]
|
v
[Rule-based OPC]
(Coarse bias, serif, hammerhead)
|
v
[Model-based OPC]
(Lithography simulation & edge correction)
|
v
[ILT (Optional / Hotspots only)]
(Global optimization)
|
v
[OPC Verification / Sign-off]
(Process window, PV band)
|
v
[Mask Data Preparation (MDP)]
|
v
[Tape-out]
At this stage, no lithography effects are considered. The layout represents the ideal target geometry.
The layout polygons are converted into an edge-based representation that can be manipulated by the OPC engine.
Rule-based OPC applies predefined geometric corrections based on pattern type and local context.
| Characteristic | Description |
|---|---|
| Speed | Very fast |
| Accuracy | Limited |
| Prediction | No wafer simulation |
Goal: Remove large systematic lithographic errors early.
Model-based OPC uses calibrated lithography models to predict wafer contours and iteratively correct mask edges.
Mask ↓ Optical Model (Hopkins) ↓ Aerial Image ↓ Resist Model (Mack) ↓ Wafer Contour ↓ Error to Target ↓ Edge Adjustment (Iterative)
ILT is selectively applied to critical hotspots where conventional OPC cannot meet process window requirements.
ILT is not applied to full-chip layouts in production.
The OPC-corrected mask is verified using full lithography simulation.
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