Calibre-based OPC Flow (Production Perspective)

This document describes the actual production OPC flow used in Siemens EDA Calibre, reflecting industry-standard practices for advanced semiconductor manufacturing.


1. Overall OPC Flow Diagram

[GDS Layout]
     |
     v
[Design Preparation / Fracturing]
     |
     v
[Rule-based OPC]
(Coarse bias, serif, hammerhead)
     |
     v
[Model-based OPC]
(Lithography simulation & edge correction)
     |
     v
[ILT (Optional / Hotspots only)]
(Global optimization)
     |
     v
[OPC Verification / Sign-off]
(Process window, PV band)
     |
     v
[Mask Data Preparation (MDP)]
     |
     v
[Tape-out]
The Calibre OPC flow is inherently hierarchical: speed is achieved through rule-based OPC, while accuracy is achieved through model-based OPC and selective ILT.

2. Input Layout: GDS

At this stage, no lithography effects are considered. The layout represents the ideal target geometry.


3. Design Preparation / Fracturing

The layout polygons are converted into an edge-based representation that can be manipulated by the OPC engine.

Key concept: OPC operates on edges, not polygons.

4. Rule-based OPC (Coarse Correction)

Rule-based OPC applies predefined geometric corrections based on pattern type and local context.

Characteristic Description
Speed Very fast
Accuracy Limited
Prediction No wafer simulation

Goal: Remove large systematic lithographic errors early.


5. Model-based OPC (Core Step)

Model-based OPC uses calibrated lithography models to predict wafer contours and iteratively correct mask edges.

Mask
 ↓
Optical Model (Hopkins)
 ↓
Aerial Image
 ↓
Resist Model (Mack)
 ↓
Wafer Contour
 ↓
Error to Target
 ↓
Edge Adjustment (Iterative)
This step determines the final pattern fidelity on silicon.

6. ILT – Inverse Lithography Technology (Optional)

ILT is selectively applied to critical hotspots where conventional OPC cannot meet process window requirements.

ILT is not applied to full-chip layouts in production.


7. OPC Verification and Sign-off

The OPC-corrected mask is verified using full lithography simulation.

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